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| HL6321/22G AlGaInP Laser Diodes Description The HL6321/22G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application * Laser levelers * Measurement Features * * * * Visible light output: 635nm Typ (nearly equal to He-Ne gas laser) Optical output power: 15 mW CW Low operating current: 105 mA Max Low operating voltage: 2.7 V Max 123 HL6321/22G Absolute Maximum Ratings (TC = 25C) Item Optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO VR(LD) VR(PD) Topr Tstg Value 15 2 30 -10 to +50 -40 to +85 Unit mW V V C C Optical and Electrical Characteristics (TC = 25C) Item Optical output power Threshold current Operating current Operating voltage Slope efficiency Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Symbol PO Ith I OP VOP s p // Is Min 15 20 -- -- 0.3 625 5 24 0.07 Typ -- -- -- -- -- 635 8 30 0.26 Max -- 75 105 2.7 0.7 642 11 36 0.45 Unit mW mA mA V mW/mA nm deg. deg. mA PO = 15 mW PO = 15 mW 9(mW)/(I(12mW)-I(3mW)) PO = 15 mW PO = 15 mW PO = 15 mW PO = 15 mW, VR(PD) = 5 V Test Conditions Kink free 124 HL6321/22G Polarization direction The polarization direction is TM mode. The polarization of 0.63 m LD's is different from that of 0.83/0.78/0.67 m LD's. The polarization direction of 0.63 m LD's is illustrated in the figure below. 125 |
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